FI: 8TH INTERNATIONAL CONFERENCE ON RADIATION EFFECTS ON SEMINCONDUCTOR MATERIALS DETECTORS AND DEVICES
SEZIONE DI FIRENZE
The Conference is a forum for discussions about detector development for luminosity upgrade scenarios at the LHC. Topics include tracking performance of heavily irradiated silicon devices used in LHC experiments, radiation hardening technologies, microscopic defect analysis of irradiated semiconductor materials. The discussion of the radiation effects on wide-band gap materials as diamond, GaAs, GaN, SiC, CZT is also encouraged, in view of applications in astrophysics experiments, particle physics, radiation dosimetry, radiological applications. Another important issue regards materials science techniques based on ionising radiation probes. First day of the conference, October 12, will host a one-day course intended to introduce fundamentals in the development of semiconductor detectors for medical applications to graduate students, PhD students, post-docs and young researchers, both engineers and physicists.

DATA: 13-10-2010

Sito Collegato : http://www.2.de.unifi.it/resmdd10/

Istituto Nazionale di Fisica Nucleare - Piazza dei Caprettari, 70 - 00186 Roma
tel. +39 066840031 - fax +39 0668307924 - email: presidenza@presid.infn.it