LNS: SILICON CARBIDE: FROM MATERIALS PROPERTIES TO APPLICATIONS 
 ELENCO COMPLETO 

DATA: 29-05-2017

LABORATORI NAZIONALI DEL SUD
Silicon Carbide, having material properties between Silicon and Diamond, has the potentials to substitute both semiconductors in many applications: X-ray detectors and high-power devices, as alternative to Silicon, beam positions monitors and quantum applications, as alternative to Diamond. After a short introduction to the Paul Scherrer Institute and ETH University, I will present the different on-going research activities, focusing on the results we have recently obtained in terms of X-ray radiation hardness and device dynamics for Silicon Carbide beam positions monitors and strip detectors.


 SITO COLLEGATO 
https://agenda.infn.it/conferenceDisplay.py?confId=13633

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