FI: DEVELOPMENT OF DIAMOND CONTACTING TECHNIQUES FOR TECHNOLOGICAL DEVICES - DR. MARY DE FEUDIS 
 ELENCO COMPLETO 

DATA: 28-02-2019

SEZIONE DI FIRENZE
ABSTRACT: In the last years there has been a large increase in interest in diamond devices due to their properties, such as high radiation hardness, high carrier mobility, high thermal conductivity and high breakdown field. In particular, diamond devices are considered both performing sensors for detection and beam monitoring nuclear measurements and very functional power electronic devices working as p-n junctions and Schottky diodes. Anyway a crucial point for diamond devices is still opened: the manufacturing of ohmic and stable electrodes, which represents a huge task especially for intrinsic and lightly doped diamond films. Traditionally, the diamond contacting can be performed by two different techniques: the diamond graphitization and metallization. In this work, the laser-induced diamond graphitization process has been studied and successfully optimized for the production of ohmic graphitic contacts on a large scale diamond (20 20 mm 2 ) for nuclear applications as detector. This studied was carried out in the framework of a recent high-energy physics experiment proposed by the INFN and called Positron Annihilation into Dark Matter Experiment (PADME). By this way, the first all-carbon detector prototype has been successfully developed and tested with 450 MeV positron and electron beams provingto be a good candidate in the role of active target for PADME experiment. Afterwards, taking into account the promising results obtained on graphitic contacts, the graphitization technology was extended to the manufacturing of ohmic graphite/metal contacts on diamond for power electronic applications as Schottky diodes. In particular, the ion implantation-induced diamond graphitization process was optimized to induce a graphitic layer underneath the diamond surface, then the metallic pads micro-fabrication above a diamond mesa structure was performed to obtain a graphite/Ti/Au stack on the surface. The full contacting was developed on a sample representing a typical challenging electronic context, namely an oxygen-terminated lightly-boron doped diamond. As a result, the graphite layer proved to play a crucial role into the ohmic behavior of the electrodes. (Dr. Mary De Feudis)


 SITO COLLEGATO 

 EVENTI RECENTI 
12-12-2019: The charm and beauty of the Little Bang
12-12-2019: Circuit complexity and 2D bosonisation - Dongsheng Ge
12-12-2019: M. Tobar - Precision low energy experiments to test fundamental physics and search for dark matter
12-12-2019: MisuraCC3M@LNL: materiali superconduttivi
11-12-2019: Multiplicity and energy dependence of light charged particle production in ALICE at the LHC
11-12-2019: Double-Logarithmic contribution to Pomeron and application to the photon-photon scattering - Boris Ermolaev
10-12-2019: Dai spazio al tempo
10-12-2019: Machine Learning in High Energy Physics - Tommaso Boccali
10-12-2019: New Space Economy - European Expoforum
09-12-2019: Visita ai laboratori della Sezione INFN di Trieste da parte di studenti del Liceo Scientifico dell' IIS Cattaneo-Dall'Aglio di Castelnovo ne' Monti (RE)

[Back]

 

 

 

Istituto Nazionale di Fisica Nucleare - Piazza dei Caprettari, 70 - 00186 Roma
tel. +39 066840031 - fax +39 0668307924 - email: presidenza@presid.infn.it

F.M. F.E.